| Synthesize and Structural Characterization of MgAl₂O₄@ZIF-11 Photocatalyst |
| کد مقاله : 1367-ICOC |
| نویسندگان |
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مازیار رحیم نژاد *1، منصور جهانگیری2، محسن مهدی پور قاضی3 1دانشجوی دانشگاه سمنان 2استاد دانشگاه 3استاد |
| چکیده مقاله |
| In this investigation, MgAl₂O₄@ZIF-11 photocatalyst was synthesized using an in-situ growth method. Structural and optical properties of the prepared sample were evaluated by X-ray diffraction (XRD) and diffuse reflectance spectroscopy (DRS). XRD results confirmed the coexistence of characteristic diffraction peaks of MgAl₂O₄ spinel and ZIF-11 without the formation of secondary phases. DRS analysis indicated that the optical absorption edge of the composite remains in the ultra-violet region, with an estimated optical band gap of approximately 4.2 eV. The results suggest that ZIF-11 mainly contributes to structural integration rather than optical band gap modification [1]. In this study MgAl₂O₄ powder was dispersed in an organic solvent system under continuous stirring. Subsequently, a benzimidazole-containing solution was introduced, followed by controlled addition of a zinc precursor to initiate ZIF-11 formation on the MgAl₂O₄ surface. After completion of the reaction, the obtained product was washed, dried, and characterized using XRD and DRS techniques. XRD analysis revealed the presence of characteristic diffraction peaks corresponding to both MgAl₂O₄ and ZIF-11, confirming successful composite formation without detectable impurity phases. The preservation of diffraction features indicates that the in-situ growth process does not disrupt the crystalline structure of either component. DRS measurements showed that the optical absorption edge of the MgAl₂O₄@ZIF-11 composite remains in the ultraviolet region [2]. Tauc plot analysis estimated the optical band gap to be approximately 4.2 eV, suggesting that incorporation of ZIF-11 does not significantly modify the optical band structure of MgAl₂O₄. |
| کلیدواژه ها |
| MgAl₂O₄@ZIF-11, in-situ growth, XRD, DRS, composite synthesis |
| وضعیت: پذیرفته شده |